This work demonstrates the building of 64 nm pitch copper single and dual damascene interconnects using pitch split double patterning scheme to enable sub 80 nm pitch patterning. A self-aligned-via ...

A self-aligned via(SAV) process was employed to build 64nm pitch Dual-Damascene(DD) interconnects using a pitch split double exposure pattering scheme to form the Cu lines. TiN hardmask (HM) density ...